Growth of 100 mm indium antimonide single crystals by modified Czochralski technique

Currently there is a worldwide trend to increase the diameter of crystals grown from elemental semiconductors and semiconductor compounds. According literary data 3–5 single nowadays 4 6 inches. So far up 75 mm indium antimonide have been in Russia. Indium element base for widest field solid state electronics, i.e., optoelectronics. used fabrication range linear photodetectors photodetector arrays as light-sensitive material heat vision systems. Growth conditions selected 100 [100] using modified two-stage Czochralski technique. The graphite heating unit has oversized accommodate 150 crucible 4.5–5 kg load. results work provided substantial yield photodetectors. electrophysical properties as-grown studied Van der Pau method proved be agreement with standard parameters undoped antimonide. Using 9-field etch pit counting under an optical microscope dislocation density measured ≤ cm -2 which similar that 50 crystals.